S8050 1 of 3 silicon epitaxial planar transistor case: sot-23, molded plastic terminals: solderable per mil-std-202, method 208 polarity: see diagrams approx. weight: 0.008 grams mechanical data features a e j l top view m b c h g d k sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm maximum ratings and electrical characteristics t a = 25 c unless otherwise specified high collector current.(i c = 500ma). complementary to s8550. excellent h fe linearity. high total power dissipation.(p c =300mw) v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 500 ma p c collector dissipation 300 mw t j, t stg junction and storage temperature -55~150 symbol value units parameter
2 of 3 t electrical characteristics a = 25 c unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =0.1ma,i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =40v,i e =0 0.1 a collector cut-off current i ceo v ce =20v,i b =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =1v,i c =50ma v ce =1v,i c =500ma 120 50 350 collector-emitter saturation voltage v ce(sat) i c =500ma, i b = 50ma 0.6 v base-emitter saturation voltage v be(sat) i c =500ma, i b = 50ma 1.2 v transition frequency f t v ce =6v, i c = 20ma f=30mhz 150 mhz rank l h range 120-200 200-350
3 of 3 typical characteristics @ ta=25 unless otherwise specified
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